IRF7769L1TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 20A DIRECTFET
$5.75
Available to order
Reference Price (USD)
4,000+
$2.09209
Exquisite packaging
Discount
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Meet the IRF7769L1TRPBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRF7769L1TRPBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 124A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DirectFET™ Isometric L8
- Package / Case: DirectFET™ Isometric L8
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