IRF7779L2TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 375A DIRECTFET
$7.44
Available to order
Reference Price (USD)
1+
$7.44000
500+
$7.3656
1000+
$7.2912
1500+
$7.2168
2000+
$7.1424
2500+
$7.068
Exquisite packaging
Discount
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The IRF7779L2TRPBF from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IRF7779L2TRPBF for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DirectFET™ Isometric L8
- Package / Case: DirectFET™ Isometric L8
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