IRF7862TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 21A 8SO
$1.41
Available to order
Reference Price (USD)
4,000+
$0.56225
8,000+
$0.53723
12,000+
$0.51935
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IRF7862TRPBF single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IRF7862TRPBF combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
onsemi
FDC634P
Nexperia USA Inc.
BUK9Y43-60E,115
onsemi
2SK3486-TD-E
Infineon Technologies
BSP170PH6327XTSA1
Infineon Technologies
SPI07N65C3
STMicroelectronics
STL115N10F7AG
IXYS
IXFN26N100P
Taiwan Semiconductor Corporation
TSM60N380CH C5G
NXP USA Inc.
PML260SN,118
Renesas Electronics America Inc