IRF8304MTRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 28A DIRECTFET
$2.07
Available to order
Reference Price (USD)
1+
$2.07000
500+
$2.0493
1000+
$2.0286
1500+
$2.0079
2000+
$1.9872
2500+
$1.9665
Exquisite packaging
Discount
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Meet the IRF8304MTRPBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRF8304MTRPBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DirectFET™ Isometric MX
- Package / Case: DirectFET™ Isometric MX
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