IRFBF20PBF-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 900V 1.7A TO220AB
$2.52
Available to order
Reference Price (USD)
1+
$2.52000
500+
$2.4948
1000+
$2.4696
1500+
$2.4444
2000+
$2.4192
2500+
$2.394
Exquisite packaging
Discount
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The IRFBF20PBF-BE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's IRFBF20PBF-BE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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