IRFBG30PBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 1000V 3.1A TO220AB
$2.68
Available to order
Reference Price (USD)
1+
$2.29000
50+
$1.85580
100+
$1.67660
500+
$1.31848
1,000+
$1.10361
2,500+
$1.03200
5,000+
$0.99618
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IRFBG30PBF single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IRFBG30PBF combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
IRFUC20PBF
Vishay Siliconix
SI7465DP-T1-E3
onsemi
NTP150N65S3HF
Toshiba Semiconductor and Storage
SSM3J334R,LF
Micro Commercial Co
MCQ05P10Y-TP
STMicroelectronics
STL210N4F7AG
Harris Corporation
IRFR9120
Diodes Incorporated
ZVN3306FTA
onsemi
2SK2011
Nexperia USA Inc.