IRFH5210TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 10A/55A 8PQFN
$1.89
Available to order
Reference Price (USD)
4,000+
$0.67375
8,000+
$0.64006
12,000+
$0.61600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRFH5210TRPBF from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IRFH5210TRPBF offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerVDFN
Related Products
onsemi
CPH6443-TL-W
Fairchild Semiconductor
IRFR420T
IXYS
IXTA20N65X2
Infineon Technologies
IPP50R399CPXKSA1
Diodes Incorporated
DMN2044UCB4-7
Fairchild Semiconductor
FDAF59N30
onsemi
ATP202-TL-H
onsemi
FDD6N50FTM
Infineon Technologies
IPD30N08S222ATMA1
Fairchild Semiconductor