IRFH6200TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 49A/100A 8PQFN
$2.37
Available to order
Reference Price (USD)
4,000+
$0.87100
8,000+
$0.84240
12,000+
$0.82680
Exquisite packaging
Discount
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Discover the IRFH6200TRPBF from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IRFH6200TRPBF ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 1.1V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 10890 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerVDFN
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