IRFH8311TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N CH 30V 32A PQFN5X6
$1.35
Available to order
Reference Price (USD)
4,000+
$0.52765
8,000+
$0.50417
12,000+
$0.48739
Exquisite packaging
Discount
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Upgrade your designs with the IRFH8311TRPBF by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IRFH8311TRPBF is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 169A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6)
- Package / Case: 8-TQFN Exposed Pad
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