Shopping cart

Subtotal: $0.00

IRFI614BTUFP001

Fairchild Semiconductor
IRFI614BTUFP001 Preview
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$0.12
Available to order
Reference Price (USD)
1+
$0.12000
500+
$0.1188
1000+
$0.1176
1500+
$0.1164
2000+
$0.1152
2500+
$0.114
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 1.4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 40W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK (TO-262)
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

Related Products

Vishay Siliconix

SI2333CDS-T1-BE3

Infineon Technologies

AUIRFP4568

Toshiba Semiconductor and Storage

2SK209-GR(TE85L,F)

Diodes Incorporated

DMN4034SSS-13

Nexperia USA Inc.

BUK9Y7R2-60E,115

Vishay Siliconix

SIS892DN-T1-GE3

Infineon Technologies

IRFR7540TRPBF

Vishay Siliconix

IRFR310TRLPBF

Infineon Technologies

BTS129NKSA1

Vishay Siliconix

SI1317DL-T1-BE3

Top