IRFP243
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$2.40
Available to order
Reference Price (USD)
1+
$2.40000
500+
$2.376
1000+
$2.352
1500+
$2.328
2000+
$2.304
2500+
$2.28
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRFP243 from Harris Corporation sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Harris Corporation's IRFP243 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
onsemi
FDN340P
Vishay Siliconix
SQM40041EL_GE3
onsemi
NTD5N50T4
Nexperia USA Inc.
BUK9Y104-100B,115
IXYS
IXFX250N10P
IXYS
IXTH34N65X2
Taiwan Semiconductor Corporation
TSM033NB04LCR RLG
onsemi
FDP023N08B-F102
onsemi
MMDF1300R2
Taiwan Semiconductor Corporation