IRFR9210TRPBF
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 200V 1.9A DPAK
$1.41
Available to order
Reference Price (USD)
2,000+
$0.50299
6,000+
$0.47937
10,000+
$0.46250
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IRFR9210TRPBF single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's IRFR9210TRPBF for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Rohm Semiconductor
RQ1C075UNTR
Wolfspeed, Inc.
C3M0025065K
Rectron USA
RM2305
Nexperia USA Inc.
BUK7635-55A,118
IXYS
IXTY08N100D2
Infineon Technologies
IPI80N06S207AKSA1
Panjit International Inc.
PJA3461-AU_R1_000A1
onsemi
FDB024N06
Infineon Technologies
IRFR1205TRPBF
Diodes Incorporated