IRL530NPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 17A TO220AB
$0.68
Available to order
Reference Price (USD)
1+
$1.22000
10+
$1.08000
100+
$0.86550
500+
$0.68400
1,000+
$0.55200
Exquisite packaging
Discount
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Upgrade your designs with the IRL530NPBF by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IRL530NPBF is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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