IRLHS6342TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 8.7A/19A 6PQFN
$0.70
Available to order
Reference Price (USD)
4,000+
$0.23688
8,000+
$0.22313
12,000+
$0.20938
28,000+
$0.19975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IRLHS6342TRPBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRLHS6342TRPBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-PQFN (2x2)
- Package / Case: 6-PowerVDFN
Related Products
Microchip Technology
MSC750SMA170B4
STMicroelectronics
STD16N65M5
Vishay Siliconix
SIR460DP-T1-GE3
Fairchild Semiconductor
FQP17N08
Vishay Siliconix
SQD25N06-22L_T4GE3
Diodes Incorporated
DMT6016LSS-13
Infineon Technologies
BSZ075N08NS5ATMA1
Vishay Siliconix
SQJ418EP-T1_GE3
Fairchild Semiconductor
FQN1N60CTA
Infineon Technologies