IRLZ24NPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 18A TO220AB
$1.02
Available to order
Reference Price (USD)
1+
$1.14000
10+
$1.00000
100+
$0.78210
500+
$0.59152
1,000+
$0.48263
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IRLZ24NPBF from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IRLZ24NPBF ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Diodes Incorporated
DMNH6011LK3-13
Diodes Incorporated
DMN53D0L-13
Toshiba Semiconductor and Storage
TK39N60X,S1F
Alpha & Omega Semiconductor Inc.
AOB260L
Rohm Semiconductor
RQ6E045TNTR
Infineon Technologies
IPN95R1K2P7ATMA1
Vishay Siliconix
SIA421DJ-T1-GE3
Nexperia USA Inc.
BSS192,135
Nexperia USA Inc.
PMPB25ENEA115
Diodes Incorporated