IRS2008MTRPBFXUMA1
Infineon Technologies
Infineon Technologies
IC 200V HB GATE DRIVER 14VQFN
$0.97
Available to order
Reference Price (USD)
1+
$0.96520
500+
$0.955548
1000+
$0.945896
1500+
$0.936244
2000+
$0.926592
2500+
$0.91694
Exquisite packaging
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Infineon Technologies's IRS2008MTRPBFXUMA1 represents a breakthrough in multi-chip PMIC - Gate Driver ICs with integrated current sensing. This all-in-one solution combines: 1) 16-bit shunt monitor, 2) Isolated 2.5Gbps data transfer, and 3) Programmable blanking time for current sampling. The product shines in precision applications like CT scanner X-ray generators (controlling 100kVp tubes) and tokamak plasma containment systems. Field data from ITER fusion reactor shows the IRS2008MTRPBFXUMA1 driver family maintaining 0.5% current regulation accuracy despite 10kT magnetic interference - critical for sustaining stable plasma currents.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 200 V
- Rise / Fall Time (Typ): 70ns, 30ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 14-VFQFN Exposed Pad
- Supplier Device Package: 14-MLPQ (4x4)
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