IS43DR16320E-3DBLI
ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT PARALLEL 84TWBGA
$6.46
Available to order
Reference Price (USD)
1+
$6.16000
10+
$5.62300
25+
$5.51560
50+
$5.47780
209+
$4.91402
418+
$4.89510
627+
$4.58955
1,045+
$4.39425
Exquisite packaging
Discount
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Experience top-tier performance with the IS43DR16320E-3DBLI Memory IC from ISSI, Integrated Silicon Solution Inc, a standout in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the requirements of advanced electronic systems. Its innovative architecture ensures efficiency and reliability.
The IS43DR16320E-3DBLI exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The IS43DR16320E-3DBLI provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The IS43DR16320E-3DBLI is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-TWBGA (8x12.5)