IS61DDB21M18A-300M3L
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
IC SRAM 18MBIT PARALLEL 165LFBGA
$32.38
Available to order
Reference Price (USD)
105+
$30.14552
Exquisite packaging
Discount
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The IS61DDB21M18A-300M3L Memory IC by ISSI, Integrated Silicon Solution Inc is a high-performance component designed for the Memory category. This IC provides exceptional data storage and retrieval speeds, making it ideal for demanding electronic systems. Its durable design ensures reliable operation in various environments.
Memory ICs, including the IS61DDB21M18A-300M3L, are known for their ability to manage large datasets efficiently. These components are vital for systems that require quick and accurate memory access. The IS61DDB21M18A-300M3L features advanced technology that enhances speed and reduces power consumption, catering to modern electronic needs.
Applications of the IS61DDB21M18A-300M3L span across industries such as aerospace, consumer electronics, and industrial automation. For instance, it is used in flight control systems for precise data handling and in smart TVs for seamless streaming. The IS61DDB21M18A-300M3L is a trusted and high-quality Memory IC for a wide range of applications.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 300 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.71V ~ 1.89V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-LFBGA (13x15)
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