ISC030N10NM6ATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TDSON-8
$3.91
Available to order
Reference Price (USD)
1+
$3.91000
500+
$3.8709
1000+
$3.8318
1500+
$3.7927
2000+
$3.7536
2500+
$3.7145
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the ISC030N10NM6ATMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the ISC030N10NM6ATMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 179A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 109µA
- Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 208W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
BSC018N04LSGATMA1
Linear Integrated Systems, Inc.
SD210DE TO-72 4L
Infineon Technologies
IPP45N06S409AKSA2
Infineon Technologies
IRFB7545PBF
Diodes Incorporated
DMP2120U-7
Vishay Siliconix
SI4636DY-T1-GE3
Harris Corporation
IRFR221
Infineon Technologies
IPP030N10N5AKSA1
Nexperia USA Inc.
BUK9Y41-80E,115
Rectron USA