ISC046N04NM5ATMA1
Infineon Technologies
Infineon Technologies
40V 4.6M OPTIMOS MOSFET SUPERSO8
$1.46
Available to order
Reference Price (USD)
1+
$1.46000
500+
$1.4454
1000+
$1.4308
1500+
$1.4162
2000+
$1.4016
2500+
$1.387
Exquisite packaging
Discount
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The ISC046N04NM5ATMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's ISC046N04NM5ATMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 17µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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