ISC230N10NM6ATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TDSON-9
$0.68
Available to order
Reference Price (USD)
1+
$0.67980
500+
$0.673002
1000+
$0.666204
1500+
$0.659406
2000+
$0.652608
2500+
$0.64581
Exquisite packaging
Discount
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Meet the ISC230N10NM6ATMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The ISC230N10NM6ATMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 48W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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