ISL6608IBZ-T
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 8SOIC
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The ISL6608IBZ-T PMIC - Gate Driver IC by Renesas Electronics America Inc pioneers AI-optimized power switching through machine learning interfaces. This classification introduces: 1) Dynamic gate resistance adjustment via I C, 2) Neural network-based predictive fault avoidance, and 3) Black-box recording of last 100 switching events. Data center applications see particular advantage in GPU power stages (NVIDIA HGX), where the ISL6608IBZ-T reduces transient overshoot by 40% through adaptive slew rate control. Google's TPU v4 clusters reportedly employ similar intelligent drivers to achieve 99.999% PSU availability, learning from historical load patterns.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 5.5V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 22 V
- Rise / Fall Time (Typ): 8ns, 8ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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