ISL6609CRZ

Renesas Electronics America Inc

Manufacturer

Renesas Electronics America Inc

Description:

IC GATE DRVR HALF-BRIDGE 8QFN

Datasheet:

ISL6609CRZ Datasheet

$0.00

Available to order

Reference Price (USD)

$1.92000

10+

$1.72300

25+

$1.62520

100+

$1.38450

300+

$1.30000

500+

$1.13750

1,000+

$0.94250

2,500+

$0.87750

5,000+

$0.84500

Exquisite packaging

Discount

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The ISL6609CRZ from Renesas Electronics America Inc is a high-performance PMIC - Gate Driver IC designed for precision control in power management applications. This integrated circuit excels in driving MOSFETs and IGBTs with exceptional speed and reliability, making it ideal for high-frequency switching systems. Key features include robust noise immunity, low propagation delay, and adaptive dead-time control to optimize efficiency. These gate drivers are widely used in industrial motor controls, solar inverters, and electric vehicle powertrains. For instance, the ISL6609CRZ ensures seamless operation in servo drives requiring nanosecond-level response times. Its compact design and thermal protection mechanisms further enhance system longevity in demanding environments like factory automation and renewable energy systems.

Specifications

Product Status: Obsolete
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V ~ 5.5V
Logic Voltage - VIL, VIH: 1V, 2V
Current - Peak Output (Source, Sink): -, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36 V
Rise / Fall Time (Typ): 8ns, 8ns
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Supplier Device Package: 8-QFN (3x3)

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ISL6609CRZ

Reference Price (USD)

Specifications

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