ISL89160FBEBZ-T
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR LOW-SIDE 8SOIC
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ISL89160FBEBZ-T PMIC - Gate Driver by Renesas Electronics America Inc sets new benchmarks for intelligent power device control. As part of the ICs family, this solution incorporates digital input interfaces (PWM, SPI) alongside analog fault monitoring pins. Its standout attributes are: 1) 12ns typical propagation delay matching, 2) -40 C to +150 C junction temperature range, and 3) configurable soft-turnoff during overcurrent events. Dominant market applications encompass 5G base station PAs, MRI gradient amplifiers, and hydrogen fuel cell converters. A case in point: Siemens' latest wind turbine converters leverage ISL89160FBEBZ-T-equivalent drivers to achieve 99.2% availability in offshore conditions, thanks to conformal coating against salt spray corrosion.
Specifications
- Product Status: Obsolete
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 16V
- Logic Voltage - VIL, VIH: 1.85V, 3.15V
- Current - Peak Output (Source, Sink): 6A, 6A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
Related Products
Fairchild Semiconductor
FAN7361M
Renesas Electronics America Inc
PX3511ADAG-R3
Infineon Technologies
IRS21853STRPBF
Analog Devices Inc./Maxim Integrated
MAX8791GTA+
Intersil
ISL6613ECB
Infineon Technologies
IR2112STR
IXYS Integrated Circuits Division
IX2127NTR
Renesas Electronics America Inc
ISL6614IB
Analog Devices Inc./Maxim Integrated
MAX5078BATT/V+T
Analog Devices Inc./Maxim Integrated