ISL89162FRTBZ-T
Renesas Electronics America Inc

Renesas Electronics America Inc
IC GATE DRVR LOW-SIDE 8TDFN
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Renesas Electronics America Inc's ISL89162FRTBZ-T represents a breakthrough in multi-chip PMIC - Gate Driver ICs with integrated current sensing. This all-in-one solution combines: 1) 16-bit shunt monitor, 2) Isolated 2.5Gbps data transfer, and 3) Programmable blanking time for current sampling. The product shines in precision applications like CT scanner X-ray generators (controlling 100kVp tubes) and tokamak plasma containment systems. Field data from ITER fusion reactor shows the ISL89162FRTBZ-T driver family maintaining 0.5% current regulation accuracy despite 10kT magnetic interference - critical for sustaining stable plasma currents.
Specifications
- Product Status: Obsolete
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 16V
- Logic Voltage - VIL, VIH: 1.85V, 3.15V
- Current - Peak Output (Source, Sink): 6A, 6A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-TDFN (3x3)