ISL89163FRTBZ-T
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR LOW-SIDE 8TDFN
$0.00
Available to order
Reference Price (USD)
6,000+
$1.86880
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Renesas Electronics America Inc presents the ISL89163FRTBZ-T as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Obsolete
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 16V
- Logic Voltage - VIL, VIH: 1.85V, 3.15V
- Current - Peak Output (Source, Sink): 6A, 6A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-TDFN (3x3)
Related Products
Analog Devices Inc./Maxim Integrated
MAX4429MJA/883B
Renesas Electronics America Inc
HIP6601BECBZA
Infineon Technologies
IRS21953STRPBF
Renesas Electronics America Inc
ISL6613AECB
Infineon Technologies
IRS2123SPBF
Infineon Technologies
IRS2330SPBF
Infineon Technologies
IR2108
Infineon Technologies
IRS21962SPBF
Infineon Technologies
IR1175STR
Renesas Electronics America Inc