IVCR1401DR
Inventchip
Inventchip
SIC MOSFET AND IGBT DRIVER, 4A,
$2.66
Available to order
Reference Price (USD)
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$2.66000
500+
$2.6334
1000+
$2.6068
1500+
$2.5802
2000+
$2.5536
2500+
$2.527
Exquisite packaging
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Optimize your power systems with Inventchip's IVCR1401DR, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The IVCR1401DR demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, SiC MOSFET
- Voltage - Supply: 19V ~ 25V
- Logic Voltage - VIL, VIH: 1.7V, 1.6V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 13ns, 13ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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