IX2R11M6T/R
IXYS
IXYS
IC GATE DRVR HALF-BRIDGE 16MLP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IX2R11M6T/R from IXYS redefines compact power management as a space-optimized PMIC - Gate Driver IC. Measuring just 3x3mm QFN, this classification achieves 5kV reinforced isolation through innovative transformer coupling technology. Signature features are: 1) 50% lower quiescent current than industry average, 2) 3.3V/5V logic level translation, and 3) Lead-free/RoHS 3.0 compliance. Consumer electronics particularly benefit in wireless charging pads (Qi 1.3 standard), drone ESC modules, and VR headset power circuits. Real-world testing demonstrates the IX2R11M6T/R enabling 95W USB-PD adapters at 30W/in power density - a key enabler for Apple's MagSafe ecosystem.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 35V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 500 V
- Rise / Fall Time (Typ): 8ns, 7ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-VDFN Exposed Pad
- Supplier Device Package: 16-MLP (7x6)
Related Products
STMicroelectronics
L6498LTR
Microchip Technology
SG1644Y-883B
Microchip Technology
SG1626J
Microchip Technology
SG1626L-883B
Power Integrations
2SP0325T2A1-CM1800DY-34S
Power Integrations
1SD418F2-FZ1200R33KF2
Power Integrations
1SD210F2-MBN750H65E2
IXYS
IXDD430MCI
onsemi
NCP81382MNTXG
Power Integrations