IXD611P1
IXYS
IXYS
IC GATE DRVR HALF-BRIDGE 8DIP
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Optimize your power systems with IXYS's IXD611P1, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The IXD611P1 demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 35V
- Logic Voltage - VIL, VIH: 2.4V, 2.7V
- Current - Peak Output (Source, Sink): 600mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 28ns, 18ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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