IXDD509SIAT/R
IXYS
IXYS
IC GATE DRVR LOW-SIDE 8SOIC
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IXYS's IXDD509SIAT/R represents a breakthrough in multi-chip PMIC - Gate Driver ICs with integrated current sensing. This all-in-one solution combines: 1) 16-bit shunt monitor, 2) Isolated 2.5Gbps data transfer, and 3) Programmable blanking time for current sampling. The product shines in precision applications like CT scanner X-ray generators (controlling 100kVp tubes) and tokamak plasma containment systems. Field data from ITER fusion reactor shows the IXDD509SIAT/R driver family maintaining 0.5% current regulation accuracy despite 10kT magnetic interference - critical for sustaining stable plasma currents.
Specifications
- Product Status: Obsolete
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 30V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 9A, 9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 23ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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