IXDH20N120
IXYS
IXYS
IGBT 1200V 38A 200W TO247AD
$7.29
Available to order
Reference Price (USD)
30+
$6.43600
Exquisite packaging
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Upgrade your power management systems with the IXDH20N120 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXDH20N120 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXDH20N120 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 38 A
- Current - Collector Pulsed (Icm): 50 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
- Power - Max: 200 W
- Switching Energy: 3.1mJ (on), 2.4mJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 20A, 82Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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