IXFA22N65X2
IXYS
IXYS
MOSFET N-CH 650V 22A TO263
$5.76
Available to order
Reference Price (USD)
1+
$3.98000
50+
$3.19500
100+
$2.91100
500+
$2.35720
1,000+
$1.98800
Exquisite packaging
Discount
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The IXFA22N65X2 from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXFA22N65X2 offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 390W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263HV
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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