IXFB60N80P
IXYS
IXYS
MOSFET N-CH 800V 60A PLUS264
$28.89
Available to order
Reference Price (USD)
1+
$21.52000
25+
$18.09320
100+
$16.62600
500+
$14.18100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXFB60N80P by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXFB60N80P is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264™
- Package / Case: TO-264-3, TO-264AA
Related Products
Fairchild Semiconductor
FQI7N10LTU
Fairchild Semiconductor
FQH35N40
onsemi
NTD2955T4G
NXP USA Inc.
PMV62XN215
Infineon Technologies
IPB044N15N5ATMA1
Alpha & Omega Semiconductor Inc.
AO4268
Fairchild Semiconductor
HUF75623P3
onsemi
FQPF2N80YDTU
Infineon Technologies
IPP230N06L3GXKSA1
Infineon Technologies