IXFH26N60P
IXYS
IXYS
MOSFET N-CH 600V 26A TO247AD
$9.18
Available to order
Reference Price (USD)
1+
$6.30000
30+
$5.16600
120+
$4.66200
510+
$3.90600
1,020+
$3.52800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IXFH26N60P by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXFH26N60P stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
Related Products
Harris Corporation
IRF351
Fairchild Semiconductor
ISL9N308AS3ST
Micro Commercial Co
MCG65N03-TP
Diodes Incorporated
DMTH6016LFVWQ-13
Fairchild Semiconductor
FQPF5N30
onsemi
FDC3535
onsemi
FDBL0240N100
Toshiba Semiconductor and Storage
SSM6K217FE,LF
STMicroelectronics
STD5N95K3
Vishay Siliconix