IXFH69N30P
IXYS
IXYS
MOSFET N-CH 300V 69A TO247AD
$12.68
Available to order
Reference Price (USD)
30+
$7.13400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXFH69N30P single MOSFET from IXYS is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IXFH69N30P is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
Related Products
NXP Semiconductors
BUK769R6-80E,118
STMicroelectronics
STF35N65M5
IXYS
IXFN40N90P
Infineon Technologies
IPW60R090CFD7XKSA1
Nexperia USA Inc.
PMV55ENEAR
onsemi
NVMFS6H801NT1G
Vishay Siliconix
SUP53P06-20-E3
Vishay Siliconix
SIR1309DP-T1-GE3
STMicroelectronics
STF11N65M5
Nexperia USA Inc.