IXFN132N50P3
IXYS
IXYS
MOSFET N-CH 500V 112A SOT227B
$38.29
Available to order
Reference Price (USD)
1+
$25.92000
10+
$23.97600
100+
$20.47680
500+
$18.14400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IXFN132N50P3 single MOSFET from IXYS. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust IXYS's IXFN132N50P3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1500W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
onsemi
NVMFS5C410NWFAFT3G
Toshiba Semiconductor and Storage
SSM3K72CTC,L3F
Alpha & Omega Semiconductor Inc.
AOTF12N60
IXYS
IXFX64N60P3
IXYS
IXTK200N10L2
Vishay Siliconix
SIHH21N65E-T1-GE3
Infineon Technologies
IPB144N12N3GATMA1
STMicroelectronics
STP7N105K5
Taiwan Semiconductor Corporation
TSM301K12CQ RFG
Alpha & Omega Semiconductor Inc.