IXFN27N120SK
IXYS
IXYS
SICARBIDE-DISCRETE MOSFET SOT-22
$47.21
Available to order
Reference Price (USD)
1+
$47.21300
500+
$46.74087
1000+
$46.26874
1500+
$45.79661
2000+
$45.32448
2500+
$44.85235
Exquisite packaging
Discount
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Choose the IXFN27N120SK from IXYS for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the IXFN27N120SK stands out for its reliability and efficiency. IXYS's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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