IXFN320N17T2
IXYS
IXYS
MOSFET N-CH 170V 260A SOT227B
$45.64
Available to order
Reference Price (USD)
1+
$37.06000
10+
$34.28100
30+
$31.50100
100+
$29.27740
250+
$26.86852
Exquisite packaging
Discount
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The IXFN320N17T2 from IXYS sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to IXYS's IXFN320N17T2 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 170 V
- Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 45000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1070W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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