IXFN64N60P
IXYS
IXYS
MOSFET N-CH 600V 50A SOT227B
$33.90
Available to order
Reference Price (USD)
10+
$22.03400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXFN64N60P by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXFN64N60P is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 700W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
STMicroelectronics
STB4N62K3
Nexperia USA Inc.
BUK9614-55A,118
Diodes Incorporated
DMP2047UCB4-7
Diodes Incorporated
ZXMN2B03E6TA
Infineon Technologies
IRF300P226
Fairchild Semiconductor
FQI10N20CTU
STMicroelectronics
STF18NM60N
Renesas Electronics America Inc
RJK0701DPN-E0#T2
Diodes Incorporated
BS170FTA
Rohm Semiconductor