IXFP36N20X3
IXYS
IXYS
MOSFET N-CH 200V 36A TO220
$4.58
Available to order
Reference Price (USD)
1+
$3.16000
50+
$2.54260
100+
$2.31650
500+
$1.87580
1,000+
$1.58200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IXFP36N20X3 by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXFP36N20X3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Rohm Semiconductor
RQ1E070RPTR
STMicroelectronics
STH180N10F3-2
onsemi
NVMYS2D2N06CLTWG
Harris Corporation
RFP15P05
onsemi
NTMYS2D4N04CTWG
Infineon Technologies
BSC057N08NS3GATMA1
Alpha & Omega Semiconductor Inc.
AO6409
STMicroelectronics
STP180NS04ZC
Renesas Electronics America Inc
2SK3305-S-AZ
Vishay Siliconix