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IXFP7N100P

IXYS
IXFP7N100P Preview
IXYS
MOSFET N-CH 1000V 7A TO220AB
$6.81
Available to order
Reference Price (USD)
1+
$4.70000
50+
$3.78000
100+
$3.44400
500+
$2.78880
1,000+
$2.35200
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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