IXFR15N100Q3
IXYS
IXYS
MOSFET N-CH 1000V 10A ISOPLUS247
$22.63
Available to order
Reference Price (USD)
1+
$15.49000
30+
$13.02400
120+
$11.96800
510+
$10.20800
Exquisite packaging
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Discover the IXFR15N100Q3 from IXYS, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IXFR15N100Q3 ensures reliable performance in demanding environments. Upgrade your circuit designs with IXYS's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247™
- Package / Case: TO-247-3
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