IXFX100N65X2
IXYS
IXYS
MOSFET N-CH 650V 100A PLUS247-3
$18.96
Available to order
Reference Price (USD)
1+
$12.98000
30+
$10.91500
120+
$10.03000
510+
$8.55500
1,020+
$8.26000
Exquisite packaging
Discount
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Upgrade your designs with the IXFX100N65X2 by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXFX100N65X2 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
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