IXFX200N10P
IXYS
IXYS
MOSFET N-CH 100V 200A PLUS247-3
$14.72
Available to order
Reference Price (USD)
30+
$9.62000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXFX200N10P by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXFX200N10P is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
Related Products
onsemi
FCH25N60N
onsemi
NVMYS2D9N04CLTWG
Fairchild Semiconductor
IRFS630A
STMicroelectronics
STW70N60DM6
Infineon Technologies
IPD65R950CFDATMA2
IXYS
IXFK180N25T
Rohm Semiconductor
RHP020N06T100
Infineon Technologies
BSS315PH6327XTSA1
Renesas Electronics America Inc
UPA2710GR-E2-A
STMicroelectronics