IXFX240N25X3
IXYS
IXYS
MOSFET N-CH 250V 240A PLUS247-3
$33.62
Available to order
Reference Price (USD)
1+
$22.76000
30+
$19.34600
120+
$17.98042
510+
$15.93200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IXFX240N25X3 single MOSFET from IXYS. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IXFX240N25X3 combines cutting-edge technology with IXYS's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 120A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
Related Products
Diodes Incorporated
DMN10H220L-7
STMicroelectronics
STP22NM60N
Infineon Technologies
IPA60R099P6XKSA1
Taiwan Semiconductor Corporation
TSM80N950CH C5G
onsemi
NDT01N60T1G
onsemi
FDMS86200
Nexperia USA Inc.
PMV88ENEAR
Infineon Technologies
IPB160N04S4LH1ATMA1
Alpha & Omega Semiconductor Inc.
AOT470
Microchip Technology