IXGH32N120A3
IXYS
IXYS
IGBT 1200V 75A 300W TO247
$10.44
Available to order
Reference Price (USD)
1+
$8.16000
10+
$7.34700
30+
$6.69433
120+
$6.04117
270+
$5.55133
510+
$5.06153
1,020+
$4.40842
Exquisite packaging
Discount
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Upgrade your power management systems with the IXGH32N120A3 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXGH32N120A3 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXGH32N120A3 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 230 A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
- Power - Max: 300 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 89 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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