IXGH32N170A
IXYS
IXYS
IGBT 1700V 32A 350W TO247
$23.88
Available to order
Reference Price (USD)
1+
$20.26000
10+
$18.41700
25+
$17.03560
100+
$15.65450
250+
$14.27316
500+
$13.35232
Exquisite packaging
Discount
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Optimize your power systems with the IXGH32N170A Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXGH32N170A delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 32 A
- Current - Collector Pulsed (Icm): 110 A
- Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
- Power - Max: 350 W
- Switching Energy: 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 155 nC
- Td (on/off) @ 25°C: 46ns/260ns
- Test Condition: 850V, 32A, 2.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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