IXGP30N120B3
IXYS
IXYS
IGBT 1200V 60A 300W TO220
$7.56
Available to order
Reference Price (USD)
1+
$6.62000
10+
$5.90600
50+
$5.31560
100+
$4.84310
250+
$4.37064
500+
$3.92176
1,000+
$3.30750
2,500+
$3.15000
Exquisite packaging
Discount
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Discover the IXGP30N120B3 Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXGP30N120B3 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXGP30N120B3 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
- Power - Max: 300 W
- Switching Energy: 3.47mJ (on), 2.16mJ (off)
- Input Type: Standard
- Gate Charge: 87 nC
- Td (on/off) @ 25°C: 16ns/127ns
- Test Condition: 960V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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