IXKH35N60C5
IXYS
IXYS
MOSFET N-CH 600V 35A TO247AD
$11.62
Available to order
Reference Price (USD)
30+
$7.11367
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXKH35N60C5 by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXKH35N60C5 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-247-3
Related Products
Panjit International Inc.
PJL9418_R2_00001
Diodes Incorporated
DMT2004UFV-7
Diodes Incorporated
DMP2069UFY4-7
onsemi
NTMFS4H013NFT3G
Renesas Electronics America Inc
H5N2007LSTL-E
Fairchild Semiconductor
HUFA75344G3
STMicroelectronics
STP12NK30Z
Toshiba Semiconductor and Storage
TJ60S06M3L,LXHQ
Diodes Incorporated
ZVN0545ASTZ
Infineon Technologies