IXKN75N60C
IXYS
IXYS
MOSFET N-CH 600V 75A SOT-227B
$68.13
Available to order
Reference Price (USD)
1+
$38.52000
10+
$36.01900
30+
$33.31200
100+
$31.23000
250+
$29.14800
Exquisite packaging
Discount
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Meet the IXKN75N60C by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXKN75N60C stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: Super Junction
- Power Dissipation (Max): 560W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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